? semiconductor components industries, llc, 2013 september, 2013 ? rev. 2 1 publication order number: bav23clt1/d bav23cl, nsvbav23cl dual high voltage common cathode switching diode features ? moisture sensitivity level: 1 ? esd rating ? human body model: class 2 esd rating ? machine model: class c ? fast switching speed ? switching application ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant typical applications ? lcd tv ? power supply ? industrial maximum ratings rating symbol value unit continuous reverse voltage v r 250 v repetitive peak reverse voltage v rrm 250 v peak forward current i f 400 ma non ? repetitive peak @ t = 1.0 s forward surge current @ t = 100 s @ t = 10 ms i fsm 9.0 3.0 1.7 a peak forward surge current i fm(surge) 625 madc non ? repetitive peak per human body model per machine model hbm mm 4.0 400 kv v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. device package shipping ? ordering information sot ? 23 case 318 style 9 marking diagram 1 2 3 http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. bav23clt1g sot ? 23 (pb ? free) 3000 / tape & reel 1 aa m aa = specific device code m = date code = pb ? free package (note: microdot may be in either location) 3 cathode 2 anode anode 1 2 3 bav23clt3g sot ? 23 (pb ? free) 10000 / tape & reel NSVBAV23CLT1G sot ? 23 (pb ? free) 3000 / tape & reel
bav23cl, nsvbav23cl http://onsemi.com 2 thermal characteristics characteristic symbol max unit single heated total device dissipation (note 1) t a = 25 c derate above 25 c p d 265 2.1 mw mw/ c thermal resistance, junction ? to ? ambient (note 1) r ja 472 c/w thermal reference, junction ? to ? anode lead (note 1) r_ jl 263 c/w thermal reference, junction ? to ? case (note 1) r_ jc 289 c/w total device dissipation (note 2) t a = 25 c derate above 25 c p d 345 2.7 mw mw/ c thermal resistance, junction ? to ? ambient (note 2) r ja 362 c/w thermal reference, junction ? to ? anode lead (note 2) r_ jl 251 c/w thermal reference, junction ? to ? case (note 2) r_ jc 250 c/w dual heated (note 3) total device dissipation (note 1) t a = 25 c derate above 25 c p d 390 3.1 mw mw/ c thermal resistance, junction ? to ? ambient (note 1) r ja 321 c/w thermal reference, junction ? to ? anode lead (note 1) r_ jl 159 c/w thermal reference, junction ? to ? case (note 1) r_ jc 138 c/w total device dissipation (note 2) t a = 25 c derate above 25 c p d 540 4.3 mw mw/ c thermal resistance, junction ? to ? ambient (note 2) r ja 231 c/w thermal reference, junction ? to ? anode lead (note 2) r_ jl 148 c/w thermal reference, junction ? to ? case (note 2) r_ jc 119 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 1. fr-4 @ 100 mm 2 , 1 oz. copper traces, still air. 2. fr-4 @ 500 mm 2 , 2 oz. copper traces, still air. 3. dual heated values assume total power is sum of two equally powered channels electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics reverse voltage leakage current (v r = 200 vdc) (v r = 200 vdc, t j = 150 c) i r ? ? 0.1 100 adc reverse breakdown voltage (i br = 100 adc) v (br) 250 ? vdc forward voltage (i f = 100 madc) (i f = 200 madc) v f ? ? 1000 1250 mv diode capacitance (v r = 0, f = 1.0 mhz) c t ? 5.0 pf reverse recovery time (i f = i r = 30 madc, r l = 100 ) t rr ? 150 ns
bav23cl, nsvbav23cl http://onsemi.com 3 figure 1. forward voltage figure 2. reverse current v f , forward voltage (v) v r , reverse voltage (v) 1.4 1.2 1.0 0.8 0.4 0.2 0.001 0.01 0.1 1 250 200 150 100 50 0 0.0001 0.001 0.01 0.1 10 100 figure 3. total capacitance v r , reverse voltage (v) 35 25 20 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 i f , forward current (ma) i r , reverse current ( a) c t , total capacitance (pf) 0.6 0 c 125 c ? 40 c 75 c 25 c 150 c 125 c ? 40 c 75 c 25 c 1 30 40 t a = 25 c f = 1 mhz 150 c 0 c notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 30 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 30 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 3.0 ma output pulse (i f = i r = 30 ma; measured at i r(rec) = 3.0 ma) i f input signal figure 4. recovery time equivalent test circuit
bav23cl, nsvbav23cl http://onsemi.com 4 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap style 9: pin 1. anode 2. anode 3. cathode mm inches scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10 on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bav23clt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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